金笔佳文翻译：个人简介翻译案例

个人简介为某人的简要介绍。个人简介可以是表格的形式，也可以是其他形式。一般用于初次见面时个人介绍中或者个人履历表中等。下面是金笔佳文翻译公司分享的个人简介翻译案例。

原文：

XXX士的专长是电子存储器及无线射频识别(RFID)技术研究。在1998至2001年，在美国国家标准化局半导体部参加了美国国家半导体重大项目。其实验技术被归入到美国国家标准用来认证工艺，其研究成果被发表在IEEE的超级杂志Electron Device Letters (EDL)上。 2001至2008年，XXX士在美国科学院院士 Carver Mead创建的Impinj Inc.公司工作了7年，进行UHF RFID技术和产品研发, 开发和量产了世界上首先个低功耗C1G2超高频RFID标签芯片。2001年，王彬首次论证了用7纳米栅氧化层来存储电荷信息的可行性，该成果被发表在IEEE的 EDL上。

2008至2009年，XXX士在世界上较大的NOR闪存存储器公司飞索期间，作为32纳米先进存储器项目经理之一，领导和完成了电容流片的设计。2009年上半年，XXX士在美国工程院院士T.P.Ma的苏州创业公司，作为技术总监，从事过相变存储器的专利技术基本研究。

2009年到现在，XXX士作为首席架构师、设计顾问，在上海集成电路研发中心- ***级研发中心，负责两项国家十一五重大专项的实施工作：一是 “核高基”的“嵌入式多模、多频收发器关键IP硬核研究”项目，二是“极大规模集成电路制造技术及成套工艺”的“65nm模型和IP设计”。同时，作为子课题的负责人，组织十二五“核高基”的“嵌入式存储器IP核开发及应用”课题申报与答辩。

XXX士回扬州创业的目的就是建设仪征RFID 产业基地，推动仪征经济、社会、环境全面飞跃，为当地创造税收，提供更多的就业机会。公司的目标是做中国创业板的上市公司，2-3年公司收支持平，4-5年产值过亿，并争取很快通过产业整合，准备上市。中国市场巨大，建立具有自主知识产权的RFID 产业链，会对中国RFID发展起广泛深远的影响。通过大规模产业化生产，来降低成本，使当前正处于发展初级阶段的RFID市场快速成熟起来。

1981年赴美留学，1984年在美国普渡大学获得物理学博士学位，获得普渡大学爱德华爱克力奖;1987-1990年在美国布朗大学担任物理系助理教授;1990-1998年担任美国摩托罗拉公司实验室主任科学家;1998-2001年担任美国霍尼韦尔公司首席工程院士兼MRAM技术总监，成功开发了世界首先颗1Mbit MRAM器件;2002-2007年担任捷智半导体主要创始人及首席营销官;2008-2011年担任芯晟(北京)科技有限公司总裁及首席运营官;拥有84项美国专利，在各类国际专业科学技术期刊上发表论文60余篇，获2009年中组部海外高层次人才 “千人计划”奖，“北京市特聘专家”，2009年中关村优质领军人才奖。

1996年毕业于清华大学，2001年美国布朗大学硕士学位，2004年美国马里兰大学博士学位。

5年的美国射频集成电路设计公司的经历 (2002-2007)

负责GPRS/EDGE手机，无线局域网，超宽带等产品的设计到量产5千万颗

发表了14篇杂志和会议文章，有3个美国/中国专利

国际会议IEEE RAWCON 和ECS的评委

核心杂志IEEE PAMI and TCAS 的审稿人

1991.09-1996.07 就读于清华大学工程物理系。1996.07-2001.07作为博士生就读于清华大学工程物理系机电与控制实验室。2001.09来到北京方舟科技工作，作为高级硬件工程师，曾独立设计FPGA验证平台，SOC开发板，基于SOC的产品设计。2004.9-2011.5杨作兴博士来到北京中星微电子工作，被任命为高级 IC DESIGN 工程师，参与多个ASIC项目。05年9月作为IC设计经理，负责公司噪声消除芯片的设计和项目管理，该芯片是公司首先个ON SCHEDULE的芯片项目。05年12月负责公司首先代SOC芯片的部分模块设计，该芯片量产成功，有几个百万出货。07年7月作为公司的IC设计高级经理，负责公司第二代SOC芯片的设计和项目管理并一次量产成功，为公司获得将近1千万美金的销售收入。09年9月

作为公司SOC项目的负责人，带领100多名研发人员，用了20个月，成功实现应用处理器在平板电脑领域的小批量成功量产。该芯片90%以上的模块或者IP是新写或者首先次使用，成为公司极少的一次TAPEOUT成功案例。了控制项目的质量，杨作兴博士首次采用了文档的多人(10个左右)多轮(5轮左右)REVIEW的方法;RTL CODING也采用了REVIEW的方法;在其他方面也加入了验证的流程。一次TAPEOUT成功是所有这些努力的回报。

译文：

Dr. XX ecializes in electronic memory and radio frequency identification (RFID) research. From 1998 to 2001, he had taken part in the major project of American National Semiconductor conducted by the Semiconductor Division of American National Standard Institute. His experimental technique was classified into American National Standards for process authentication, and his research achievement was published on Electron Device Letters (EDL), top magazine of Institute of Electrical and Electronics Engineers (IEEE). From 2001 to 2008, Dr. XXX Bin had worked for seven years in Impinj Inc. established by Carver Mead, member of National Academy of Sciences. Being in charge of R&D of UHR RFID technology and product, Dr. XXX developed the world’s first low power consumption C1G2 UHF RFID tag chip and made it mass production. In 2001, Dr. XXX demonstrated the feasibility of storing the charge information with a 7 nm gate oxide for the first time; this result was published on the EDL of IEEE.

During 2008 to 2009, Dr. X orked in Spansion, the biggest NOR flash memory company in the world. As one of the 32 nm advanced memory project managers, he led and designed the capacitance silicon. In the first half year of 2009, Dr. x orked as the technology director at T.P.Ma’s (a member of National Academy of Engineering) venture company in Suzhou. During this time Dr. XXX was engaged in the basic research of phase change memory patented technology.

From 2009 till now, as the Chief Architect and Design Consultant of Shanghai Integrated Circuit Research and Development Center - National Research and Development Center, Dr. Xwas responsible for the implementation of National “Eleventh Five-Year” two major projects: one is the “embedded multi-mode, multi-band transceiver hard core of critical IP” of the “nuclear high base” project, the other one is the “65 nm model and IP design” of the “large scale integrated circuit manufacturing technology and complete sets of process” project. Meanwhile, as the head of sub-topics programs, he also organized the application and oral defense of the “embedded memory IP core development and application” of the “nuclear high base”, which is a National “Twelvth Five-Year” research project.

The purpose that Dr. XXX returned to Yangzhou and carved out is to establish the RFID industry base in Yizheng, to promote full leap of local economy, society and environment, to generate local tax and to provide more jobs. His company aims at balancing the budget within 2 to 3 years, generating over 100 million output values within 4 to 5 years and finally being a listed company in China Growth Enterprise Market through rapid industry consolidation. China has a huge market; in this market the establishment of the RFID industry chain with independent intellectual property rights will have a far-reaching impact on China’s RFID development. The large-scale industrialization production can reduce cost and help RFID market which is currently in the initial stage of development to mature quickly.

In 1981, XXX Bin went to the United States for study; in 1984, he got a doctor degree in physics in Purdue University and obtained Edward S. Akeley Award; from 1987 to 1990, he served as a professor assistant in Physics Department of Brown University; during 1990 to 1998, he worked as chief scientist of American Motorola lab; from 1998 to 2001, he was chief engineering academician of Honeywell International as well as technology director of MRAM and successfully developed the first 1 Mbit MRAM device in the world; from 2002 to 2007, XXX took the post of founding partner and CEO of of Jazz Semiconductor; during 2008 to 2011, he was President and CEO of Celestial Semiconductor (Beijing) Technology Co., Ltd. XXX has 84 U.S. patents, has published more than 60 essays on various internationally renowned science and technology journals, was awarded “Thousand Talents Program” prize of overseas high-level talents of CPC Central Committee Organization Department in 2009. XXX was also a “Beijing Distinguished Expert” certificate holder and a Zhongguancun High-end Leading Talent Award holder.